INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 Adheres to Most Smooth Surfaces

Adheres to Most Smooth Surfaces

0 cm) Weight 24

Designed for studio

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INFINEON FF200R17KE3HOSA1 IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1.25 kW, 1.7 kV, Module Pro Co Sound SMM-10 Adheres to Most Smooth SurfacesThis is a IGBT Array & Module Transistor, N Channel, 310 A, 2 V, 1. 25 kW, 1. 7 kV, Module product from INFINEON with the model number FF200R17KE3HOSA1Product details Transistor Case Style Module Transistor Polarity N Channel Power Dissipation Pd 1. 25kW DC Collector Current 310A Collector Emitter Voltage V(br)ceo 1. 7kV Product Range 62mm C Series Operating Temperature Max 125C No. of Pins Collector Emitter Saturation Voltage Vce(on) 2V Other details